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| ON Semiconductor ) PNP Plastic Darlington Complementary Silicon Power Transistors . . . designed for general-purpose amplifier and low-speed switching applications. 2N6035 2N6036* 2N6038 2N6039 * *ON Semiconductor Preferred Device NPN * High DC Current Gain -- * Collector-Emitter Sustaining Voltage -- @ 100 mAdc * * * VCEO(sus) = 60 Vdc (Min) -- 2N6035, 2N6038 = 80 Vdc (Min) -- 2N6036, 2N6039 Forward Biased Second Breakdown Current Capability IS/b = 1.5 Adc @ 25 Vdc Monolithic Construction with Built-In Base-Emitter Resistors to LimitELeakage Multiplication Space-Saving High Performance-to-Cost Ratio TO-225AA Plastic Package hFE = 2000 (Typ) @ IC = 2.0 Adc DARLINGTON 4-AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60, 80 VOLTS 40 WATTS II II IIIIIIIIIIIIIIIIIIIIIII II II I I IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIII I I I II II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII II I II I IIIIIIIIIIIIIIIIIIIIIII I II III I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII III I I IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII IIII I I III IIIIIIIIIIIIIIIIII III I I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIII MAXIMUM RATINGS (1) Rating Symbol VCEO VCB VEB IC IB PD PD 2N6035 2N6038 60 60 2N6036 2N6039 80 80 Unit Vdc Vdc Vdc Adc Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage 5.0 4.0 8.0 Collector Current -- Continuous Peak Base Current 100 mAdc Watts W/_C Watts _C Total Power Dissipation @ TC = 25_C Derate above 25_C Total Power Dissipation @ TA = 25_C Derate above 25_C Operating and Storage Junction Temperature Range 40 0.32 1.5 0.012 TJ, Tstg -65 to +150 32 1 STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE CASE 77-09 TO-225AA TYPE THERMAL CHARACTERISTICS Characteristic Symbol JC JA Max Unit Thermal Resistance, Junction to Case 3.12 83.3 _C/W _C/W Thermal Resistance, Junction to Ambient (1) Indicates JEDEC Registered Data. Preferred devices are ON Semiconductor recommended choices for future use and best overall value. (c) Semiconductor Components Industries, LLC, 2002 1 April, 2002 - Rev. 10 Publication Order Number: 2N6035/D 2N6035 2N6036 2N6038 2N6039 TA TC 4.0 40 PD, POWER DISSIPATION (WATTS) 3.0 30 TC 2.0 20 1.0 10 TA 0 0 0 20 40 60 80 100 T, TEMPERATURE (C) 120 140 160 Figure 1. Power Derating http://onsemi.com 2 2N6035 2N6036 2N6038 2N6039 V2 approx +8.0 V 0 V1 approx -12 V t, TIME ( s) III I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I III I I I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I II I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIII I II I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII I III I I I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I II I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (IC = 100 mAdc, IB = 0) Collector-Cutoff Current (VCE = 60 Vdc, IB = 0) (VCE = 80 Vdc, IB = 0) VCEO(sus) Vdc 2N6035, 2N6038 2N6036, 2N6039 60 80 -- -- ICEO A 2N6035, 2N6038 2N6036, 2N6039 -- -- 100 100 Collector-Cutoff Current (VCE = 60 Vdc, VBE(off) = 1.5 Vdc) (VCE = 80 Vdc, VBE(off) = 1.5 Vdc) (VCE = 60 Vdc, VBE(off) = 1.5 Vdc, TC = 125_C) (VCE = 80 Vdc, VBE(off) = 1.5 Vdc, TC = 125_C) Collector-Cutoff Current (VCB = 60 Vdc, IE = 0) (VCB = 80 Vdc, IE = 0) ICEX A 2N6035, 2N6038 2N6036, 2N6039 2N6035, 2N6038 2N6036, 2N6039 -- -- -- -- 100 100 500 500 ICBO mAdc 2N6035, 2N6038 2N6036, 2N6039 -- -- -- 0.5 0.5 2.0 Emitter-Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO mAdc ON CHARACTERISTICS DC Current Gain (IC = 0.5 Adc, VCE = 3.0 Vdc) (IC = 2.0 Adc, VCE = 3.0 Vdc) (IC = 4.0 Adc, VCE = 3.0 Vdc) hFE -- 500 750 100 -- -- -- -- -- 15,000 -- Collector-Emitter Saturation Voltage (IC = 2.0 Adc, IB = 8.0 mAdc) (IC = 4.0 Adc, IB = 40 mAdc) VCE(sat) Vdc 2.0 3.0 4.0 2.8 Base-Emitter Saturation Voltage (IC = 4.0 Adc, IB = 40 mAdc) Base-Emitter On Voltage (IC = 2.0 Adc, VCE = 3.0 Vdc) VBE(sat) VBE(on) Vdc Vdc DYNAMIC CHARACTERISTICS Small-Signal Current-Gain (IC = 0.75 Adc, VCE = 10 Vdc, f = 1.0 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) |hfe| Cob 25 -- -- pF 2N6035, 2N6036 2N6038, 2N6039 -- -- 200 100 *Indicates JEDEC Registered Data. CC RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS -30 V D1 MUST BE FAST RECOVERY TYPE, eg: 1N5825 USED ABOVE IB 100 mA RC SCOPE MSD6100 USED BELOW IB 100 mA TUT RB 51 D1 +4.0 V 25 s for td and tr, D1 is disconnected and V2 = 0, RB and RC are varied to obtain desired test currents. For NPN test circuit, reverse diode, polarities and input pulses. V 4.0 ts 2.0 VCC = 30 V IB1 = IB2 IC/IB = 250 TJ = 25C 8.0 k 60 1.0 0.8 0.6 0.4 PNP NPN 0.1 tf tr td @ VBE(off) = 0 2.0 4.0 tr, tf 10 ns DUTY CYCLE = 1.0% 0.2 0.04 0.06 0.2 0.4 0.6 1.0 IC, COLLECTOR CURRENT (AMP) Figure 2. Switching Times Test Circuit http://onsemi.com 3 Figure 3. Switching Times 2N6035 2N6036 2N6038 2N6039 r(t), TRANSIENT THERMAL RESISTANCE, NORMALIZED 1.0 0.7 0.5 0.3 0.2 D = 0.5 0.2 0.1 0.05 0.02 SINGLE PULSE 0.01 P(pk) JC(t) = r(t) JC JC = 3.12C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN t1 READ TIME AT t1 t2 TJ(pk) - TC = P(pk) JC(t) DUTY CYCLE, D = t1/t2 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 t, TIME (ms) 10 20 30 50 100 200 300 500 1000 0.1 0.07 0.05 0.03 0.02 0.01 0.01 0.02 0.03 0.05 Figure 4. Thermal Response http://onsemi.com 4 2N6035 2N6036 2N6038 2N6039 ACTIVE-REGION SAFE-OPERATING AREA 1.0 7.0 5.0 3.0 2.0 100 s 1.0 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 5.0 100 s dc 1.0 ms IC, COLLECTOR CURRENT (AMP) dc TJ = 150C BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25C (SINGLE PULSE) SECOND BREAKDOWN LIMITED 2N6036 2N6035 7.0 70 20 10 30 50 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 100 IC, COLLECTOR CURRENT (AMP) 5.0 ms 1.0 ms 5.0 ms 1.0 0.7 0.5 0.3 0.2 0.1 5.0 TJ = 150C BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25C (SINGLE PULSE) SECOND BREAKDOWN LIMITED 2N6039 2N6038 7.0 10 30 50 70 20 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 100 Figure 5. 2N6035, 2N6036 Figure 6. 2N6038, 2N6039 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figures 5 and 6 is based on T J(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) < 150_C. TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 200 TC = 25C C, CAPACITANCE (pF) 100 70 50 30 20 PNP NPN Cib Cob 10 0.04 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0 6.0 10 VR, REVERSE VOLTAGE (VOLTS) 20 40 Figure 7. Capacitance http://onsemi.com 5 2N6035 2N6036 2N6038 2N6039 PNP 2N6035, 2N6036 6.0 k 4.0 k hFE , DC CURRENT GAIN 3.0 k 2.0 k 25C -55C 1.0 k 800 600 400 300 0.04 0.06 TC = 125C VCE = 3.0 V hFE , DC CURRENT GAIN 6.0 k 4.0 k 3.0 k 2.0 k TJ = 125C 25C NPN 2N6038, 2N6039 VCE = 3.0 V 1.0 k 800 600 400 300 0.04 0.06 -55C 0.1 0.2 1.0 0.4 0.6 IC, COLLECTOR CURRENT (AMP) 2.0 4.0 0.1 0.2 1.0 0.4 0.6 IC, COLLECTOR CURRENT (AMP) 2.0 4.0 Figure 8. DC Current Gain VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 3.0 2.6 2.2 1.8 1.4 1.0 0.6 0.1 0.2 0.5 1.0 2.0 5.0 10 IB, BASE CURRENT (mA) 20 IC = 0.5 A 1.0 A 2.0 A 4.0 A TJ = 25C VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 3.4 3.4 3.0 2.6 2.2 1.8 1.4 1.0 0.6 0.1 0.2 0.5 1.0 2.0 10 5.0 IB, BASE CURRENT (mA) 20 50 100 IC = 0.5 A TJ = 25C 1.0 A 2.0 A 4.0 A 100 50 Figure 9. Collector Saturation Region 2.2 TJ = 25C 1.8 V, VOLTAGE (VOLTS) 1.4 1.0 VCE(sat) @ IC/IB = 250 0.6 0.2 0.04 0.06 VBE(sat) @ IC/IB = 250 V, VOLTAGE (VOLTS) VBE @ VCE = 3.0 V 2.2 TJ = 25C 1.8 1.4 1.0 VCE(sat) @ IC/IB = 250 0.6 0.2 0.04 0.06 VBE(sat) @ IC/IB = 250 VBE @ VCE = 3.0 V 0.1 0.2 0.4 0.6 1.0 2.0 4.0 0.1 0.2 0.4 0.6 1.0 2.0 4.0 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) Figure 10. "On" Voltages http://onsemi.com 6 2N6035 2N6036 2N6038 2N6039 PACKAGE DIMENSIONS TO-225AA CASE 77-09 ISSUE W -B- U Q -A- 123 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D F G H J K M Q R S U V INCHES MIN MAX 0.425 0.435 0.295 0.305 0.095 0.105 0.020 0.026 0.115 0.130 0.094 BSC 0.050 0.095 0.015 0.025 0.575 0.655 5 _ TYP 0.148 0.158 0.045 0.065 0.025 0.035 0.145 0.155 0.040 --MILLIMETERS MIN MAX 10.80 11.04 7.50 7.74 2.42 2.66 0.51 0.66 2.93 3.30 2.39 BSC 1.27 2.41 0.39 0.63 14.61 16.63 5 _ TYP 3.76 4.01 1.15 1.65 0.64 0.88 3.69 3.93 1.02 --- F M C H K V G S D 2 PL 0.25 (0.010) M J R 0.25 (0.010) A M A M M B M B M STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE http://onsemi.com 7 2N6035 2N6036 2N6038 2N6039 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada JAPAN: ON Semiconductor, Japan Customer Focus Center 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan 141-0031 Phone: 81-3-5740-2700 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. http://onsemi.com 8 2N6035/D |
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